INTRODUCTION OF ACCEPTOR IMPURITIES BY PHOTONUCLEAR DOPING OF GALLIUM-ARSENIDE

The electrical properties and photoluminescence of epitaxial layers of GaAs doped with Se, Ge, and Zn by the method of photonuclear reaction s during irradiation with gamma-ray bremsstrahlung were investigated. It was determined that annealing of radiation-induced defects and stab ilization of the electrical parameters and intensity of recombination radiation occur at temperatures T greater than or equal to 500 degrees C. It was shown that compensation of gallium arsenide occurs during p hotonuclear doping. Analysis of the photoluminescence spectra showed t hat Zn is a compensating acceptor. The participation of the residual t echnological impurity C in radiation-induced defect formation and radi ation-stimulated diffusion processes is discussed. (C) 1996 American I nstitute of Physics.