AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX

Authors
ALFEROV ZI BERT NA EGOROV AY ZHUKOV AE KOPEV PS KOSOGOV AO KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV SAKHAROV AV USTINOV VM TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D
Citation
Zi. Alferov et al., AN INJECTION HETEROJUNCTION LASER-BASED ON ARRAYS OF VERTICALLY COUPLED INAS QUANTUM DOTS IN A GAAS MATRIX, Semiconductors, 30(2), 1996, pp. 194-196
Citations number
5
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
2
Year of publication
1996
Pages
194 - 196
Database
ISI
SICI code
1063-7826(1996)30:2<194:AIHLOA>2.0.ZU;2-8
Abstract
Lasing via the ground state of an exciton in vertically coupled quantu m dots all the way to 300 K is demonstrated for the first time. At 80 K, the threshold current density was J(th)similar to 40 A/cm(2) The te mperature dependence of the threshold current density in the range 80- 180 K is described by a characteristic temperature of T-o=430 K. (C) 1 996 American Institute of Physics.