A LOW-THRESHOLD INJECTION HETEROJUNCTION LASER-BASED ON QUANTUM DOTS,PRODUCED BY GAS-PHASE EPITAXY FROM ORGANOMETALLIC COMPOUNDS

Authors
ALFEROV ZI GORDEEV NY ZAITSEV SV KOPEV PS KOCHNEV IV KOMIN VV KRESTNIKOV IL LEDENTSOV NN LUNEV AV MAKSIMOV MV RUVIMOV SS SAKHAROV AV TSAPULNIKOV AF SHERNYAKOV YM BIMBERG D
Citation
Zi. Alferov et al., A LOW-THRESHOLD INJECTION HETEROJUNCTION LASER-BASED ON QUANTUM DOTS,PRODUCED BY GAS-PHASE EPITAXY FROM ORGANOMETALLIC COMPOUNDS, Semiconductors, 30(2), 1996, pp. 197-200
Citations number
4
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
30
Issue
2
Year of publication
1996
Pages
197 - 200
Database
ISI
SICI code
1063-7826(1996)30:2<197:ALIHLO>2.0.ZU;2-5
Abstract
A low-threshold injection laser with an active region based on quantum dots in the In0.5Ga0.5As/GaAs system has been produced by gas-phase e pitaxy from organometallic compounds. At 300 K, the threshold current density was 150 A/cm(2) for a strip 1780 mu m long and 60 mu m wide. T he threshold current density in the range 80-220 K is 50-60 A/cm(2) an d its temperature dependence is described by characteristic temperatur e T-o=530 K. (C) 1996 American Institute of Physics.