RELIABILITY OF SOURCE-TO-DRAIN NONUNIFORMLY DOPED CHANNEL (NUDC) MOSFETS FOR SUB-QUARTER-MICRON REGION

We present an analysis of hot carrier degradation in source-to-drain n onuniformely doped channel (NUDC) metal oxide semiconductor field effe ct transistors (MOSFETs). Simulation has been performed in order to in vestigate the influence of the NUDC structure on the device characteri stics. It is demonstrated that the hot carrier resistance of NUDC MOSF ETs is almost the same as that of conventional MOSFETs when thin gate oxide is used. This is due to the drain electric Geld strength of NUDC MOSFETs, which becomes the same as that of conventional MOSFETs when the gate oxide is thin, since the drain electric field is not only aff ected by the channel impurity profile but also strongly influenced by the gate electrode.