A 4 1 MUX CIRCUIT USING 1/4 MICRON CMOS/SIMOX FOR HIGH-SPEED AND LOW-POWER APPLICATIONS/

We designed a new 4:1 multiplexer (MUX) circuit and fabricated it by 0 .25-mu m CMOS device process technology using Separation by IMplanted OXygen (SIMOX) wafer. This MUX circuit has a small number of fan-outs so that the SIMOX device, with smaller junction capacitance than a BUL K device, effectively contributes to high-speed and low-power operatio n. We confirmed that the fabricated SIMOX MUX can operate at 2.7 GHz ( @V-DD = 2.0 V), which is 25% faster than the BULK MUX, and the power c onsumption is 19% less at the same speed and V-DD. In addition, we con firmed that these improvements are mainly due to the reduced junction capacitance of SIMOX devices by estimating the gate speed in the criti cal path and the load capacitance in the SIMOX MUX circuit.