A HIGH-PERFORMANCE 0.05 MU-M SOI MOS FET - POSSIBILITY OF VELOCITY OVERSHOOT

A high-transconductance 0.05 mu m n-channel metal-oxide-semiconductor field-effect transistor (MOS FET) has been realized using thin silicon on insulator (SOI)/buried oxide structures. The measured and the intr insic transconductance values are 472 mS/mm and 702 mS/mm, respectivel y. These are the highest G(m) values yet reported for SOI MOS FET. Ele ctron velocity, however, is 82% of the bulk saturation velocity, v(sst ). This is mainly due to the degradation of the mobility caused by sca ttering in the SOI layer and the temperature increment induced by the self-heating effect. Therefore, it is important to achieve both mobili ty-degradation-free and sell-heating-free conditions in order to reali ze a high-speed SOI MOS FET using the carrier velocity overshoot.