HIGH-SPEED SOI 1 8 FREQUENCY-DIVIDER USING FIELD-SHIELD BODY-FIXED STRUCTURE/

A high-speed silicon-on-insulator (SOI) 1/8 frequency divider with bod y-fixed structure was demonstrated using field-shield (FS) isolation. The maximum operation frequency is 2.1 GHz at 3.3 V. The SOI divider o perates about 1.6 times faster than a bulk divider with the same dimen sions. The normalized power consumption of the SOI divider at the maxi mum operating frequency is about 60% of that of the bulk divider. I-d- V-d transistor characteristics were improved, eliminating the kink in the saturation region, and the linearity of inverter characteristics w as also improved with the body-fixed structure. The body contact colle cts excess carriers in the channel region, thereby preventing the para sitic bipolar action. From these results, it is suggested that devices using a field-shield body-fixed SOI structure have the potential for use in GHz-level systems containing analog circuits, and they are expe cted to be applied to portable communication systems and portable comp uters used in the multimedia era.