PARTIALLY BONDED SILICON-ON-INSULATOR SUBSTRATES FOR INTELLIGENT POWER ICS

A new isolated structure for intelligent power ICs was developed using a wafer direct-lending technique. This structure has partially buried oxide films for dielectric isolation, and gaps are fabricated under t hem. In this bonding technique, bonding surfaces are crystalline silic on surfaces of the vertical output device region without buried oxide film. This bonding method leads to void-free bounding in the vertical output device region. Electrically perfect bonding was also obtained f or the vertical output, device in the new structure.