CAPACITANCE NETWORK MODEL OF THE SHORT-CHANNEL EFFECT FOR 0.1 MU-M FULLY DEPLETED SOI MOSFET

We propose a simple analytical model of the short channel effect in a fully depleted silicon-on-insulator metaloxide-silicon field effect tr ansistor (SOI-MOSFET). The influence sf the two-dimensional effect on the potential distribution, the threshold voltage and the S factor are evaluated based on the spatial distribution of the characteristic cap acitances between the SOI body and each electrode (gate, source, drain and substrate). This treatment makes it possible to estimate the two- dimensional effect without solving Poisson's equation which requires a large computation time. This model describes the short channel effect down to the 0.1 mu m regime.