PLASMA IMMERSION ION-IMPLANTATION FOR ELECTRONIC MATERIALS

Plasma immersion ion implantation (PIII) is an emerging technology pro mising high dose-rate implantation and large-area processing compatibi lity. Innovations of this technique include: area-independent implanta tion time, concomitant deposition and implantation, and simple machine design and maintenance. This review summarizes the current understand ing of PIII plasma dynamics, dosimetry, and electronic materials appli cations such as plasma doping for ultra-shallow junctions and high asp ect ratio Si trenches, and subsurface synthesis of silicon-on-insulato r materials.