USE OF INDIUM AND GALLIUM AS P-TYPE DOPANTS IN SI 0.1-MU-M MOSFETS

Devices with a channel length of 0.1 mu m, employing In and B as p-typ e channel dopants, were fabricated to investigate the short channel ef fect. In this study, the benefits of using In instead of B are investi gated with respect to the suppression of the short channel effect, the gate quality, the mobility and the long channel threshold voltage val ue. It is concluded that the use of In causes no;direct complications. The advantage of using In lies in the suppression of the short channe l effect. In this way, the conventional planar bulk device employing I n as a channel implant can be scaled further at least for one generati on of metal oxide semiconductor transistors without loss in current dr iveability. The feasibility of Ga as an ultra shallow p-type extension is also investigated.