OPTICAL CAVITY BASED ON POROUS SILICON SUPERLATTICE TECHNOLOGY

Citation
M. Araki et al., OPTICAL CAVITY BASED ON POROUS SILICON SUPERLATTICE TECHNOLOGY, JPN J A P 1, 35(2B), 1996, pp. 1041-1044
Citations number
9
Categorie Soggetti
Physics, Applied
Volume
35
Issue
2B
Year of publication
1996
Pages
1041 - 1044
Database
ISI
SICI code
Abstract
It is demonstrated that luminescent porous silicon (PS) is applicable to a vertical optical cavity which operates at wavelengths in the visi ble region. The PS device consists of a high-reflectivity thin Ag film , a light-emitting PS layer, and a quarter-wavelength multilayer refle ctor fabricated by precisely controlled PS superlattice (PSSL) technol ogy. The reflectivity of a prepared PSSL mirror is higher than 90% at designed wavelengths. When excited by a UV laser, the device acts as a Fabry-Perot resonator. Based on experimental studies of emission spec tra as a function of major design parameters (the number of PSSL pairs and the cavity length), the linewidth is significantly decreased to 6 meV in full width at half-maximum. The change in the linewidth with t he cavity length is consistent with the behavior expected from a simpl ified theoretical analysis. These results confirm that PS is applicabl e for silicon-based photonic devices.