ANOMALOUS EFFECT IN LA2-XSRXCUO4 OF DOPING LEVEL X=1 4(N)/

Citation
M. Sugahara et al., ANOMALOUS EFFECT IN LA2-XSRXCUO4 OF DOPING LEVEL X=1 4(N)/, JPN J A P 1, 35(2B), 1996, pp. 1221-1224
Citations number
8
Categorie Soggetti
Physics, Applied
Volume
35
Issue
2B
Year of publication
1996
Pages
1221 - 1224
Database
ISI
SICI code
Abstract
Anomalous electric response of La2-xSrxCuO4 thin film at Sr doping lev els of x approximate to 1/4 and 1/16 is observed when charge moves alo ng the c axis. The capacitance C-t of the Pd/La2-xSrxCuO4/SrTiO3/Pd st ructure increases sharply, exceeding the capacitance C-STO of the Pd/S rTiO3/Pd structure. Oscillatory negative voltage is observed in 4-term inal resistivity measurements of La2-xSrxCuO4 thin film using Pd elect rodes at small current. These phenomena are explained by a model of th e spatial ordered state in which CuO2 layers of La2-xSrxCuO4 is replet e with O hole pairs.