0.86 EV PLATINUM SCHOTTKY-BARRIER ON INDIUM-PHOSPHIDE BY IN-SITU ELECTROCHEMICAL PROCESS AND ITS APPLICATION TO MESFETS

Pt Schottky barrier diodes (SBDs) with a high Schottky barrier height of 0.86 eV and an ideality factor of near unity were successfully real ized by a novel in situ electrochemical process. Applying this novel t echnique to InP metal semiconductor field effect transistors (MESFETs) , good gate control of drain current with pinch-off, an effective chan nel mobility of 1,840 cm(2)V(-1)s(-1) and no drain current drift behav ior were achieved. The InP MESFET operates even under a positive gate bias, showing feasibility of enhancement-mode operation as well as dep letion-mode operation.