IMPURITY-FREE DISORDERING OF INGAAS INGAALAS QUANTUM-WELLS ON INP BY DIELECTRIC THIN CAP FILMS AND CHARACTERIZATION OF ITS INPLANE SPATIAL-RESOLUTION/

Authors
SUDO S ONISHI H NAKANO Y SHIMOGAKI Y TADA K MONDRY MJ COLDREN LA
Citation
S. Sudo et al., IMPURITY-FREE DISORDERING OF INGAAS INGAALAS QUANTUM-WELLS ON INP BY DIELECTRIC THIN CAP FILMS AND CHARACTERIZATION OF ITS INPLANE SPATIAL-RESOLUTION/, JPN J A P 1, 35(2B), 1996, pp. 1276-1279
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
35
Issue
2B
Year of publication
1996
Pages
1276 - 1279
Database
ISI
SICI code
Abstract
We have studied impurity-free disordering of InGaAs/InGaAlAs quantum w ells on Inr, induced by three different dielectric cap films, namely, SiO2, SiNx, and SrF2. The difference in photoluminescence characterist ics of these materials after heat treatment has been discussed. Furthe rmore, the in-plane spatial resolution of the disordering process has been investigated for the first time.