J. Ishizaki et al., SIMULATION AND OBSERVATION OF THE STEP BUNCHING PROCESS GROWN ON GAAS(001) VICINAL SURFACE BY METALORGANIC VAPOR-PHASE EPITAXY, JPN J A P 1, 35(2B), 1996, pp. 1280-1284
The step bunching processes on GaAs (001) vicinal surfaces grown by me
talorganic vapor phase epitaxy (MOVPE) are investigated by experiment
and the simulation method. In the early stage oi the growth, the step
bunching height and the terrace widths increase linearly and saturate
with increasing layer thickness. The step bunching height and the terr
ace widths are estimated by the Monte Carlo simulation. From the fitti
ng of the simulated step bunching process to that process of the exper
iment, the activation energy of the up-side and down-side step sites c
ompared with that of the terrace sites are obtained. Furthermore, the
terrace width saturation mechanism is clarified.