P-TYPE CONDUCTING ZNSE AND ZNSSE BY N-2 GAS-DOPING DURING MOLECULAR-BEAM-EPITAXY

Highly conductive p-ZnSe and ZnSSe can be grown by N-2-gas doping with out any activation process during molecular beam epitaxial growth. Pho toluminescence spectra indicated that the properties of N-2-gas- and n itrogen-radical-doped ZnSe with nearly equal N-A-N-D are almost the sa me. Using the N-2-gas doping method, the first laser oscillation from a ZnSe-based laser diode without nitrogen-radical doping was achieved. The LED driving voltage was 3.8 V at the operating current of 20 mA.