SCHOTTKY-BARRIER HEIGHT REDUCTION FOR P-ZNSE CONTACTS BY SULFUR TREATMENT

We have demonstrated the relationship between the structural and elect rical properties of the chemically treated p-type ZnSe surface. The un stable Se-rich ZnSe surface, formed by an acid etchant, is shown to be removed by sulfur treatment. The sulfur treatment has been found to h ave the effect of lowering the Schottky barrier height at the Au/p-typ e ZnSe interface. This barrier lowering has been found to be effective in reducing the operation voltage of the ZnSe-based devices.