We have demonstrated the relationship between the structural and elect
rical properties of the chemically treated p-type ZnSe surface. The un
stable Se-rich ZnSe surface, formed by an acid etchant, is shown to be
removed by sulfur treatment. The sulfur treatment has been found to h
ave the effect of lowering the Schottky barrier height at the Au/p-typ
e ZnSe interface. This barrier lowering has been found to be effective
in reducing the operation voltage of the ZnSe-based devices.