LOW-TEMPERATURE OXIDATION OF SILICON BY O-2 CLUSTER ION-BEAMS

Authors
AKIZUKI M MATSUO J OGASAWARA S HARADA M DOI A YAMADA I
Citation
M. Akizuki et al., LOW-TEMPERATURE OXIDATION OF SILICON BY O-2 CLUSTER ION-BEAMS, JPN J A P 1, 35(2B), 1996, pp. 1450-1453
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS → ACNP
Volume
35
Issue
2B
Year of publication
1996
Pages
1450 - 1453
Database
ISI
SICI code
Abstract
High-quality SiO2 films up to 11 nm thick were grown on Si substrate s urfaces at room temperature by O-2 cluster ion irradiation. No damage was observed after N-2 annealing at 400 degrees C for 30 min in the I- V characteristics of the thermally grown gate oxides irradiated with 5 keV Ar cluster ions. These results indicate that O-2 cluster ions str ongly enhanced the oxidation with low irradiation damage.