FORMATION OF SIOF FILMS BY PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION USING (C2H5O)(3)SIF

A new Plasma-Enhanced Chemical Vapor Deposition (PECVD) method using ( C2H5O)(3)SiF:tri-ethoxy-fluorosilane as an interlayer dielectric film is proposed based on considerations of gas chemistry. RF power depende nce of the film characteristics is investigated, and it is clarified t hat fluorine stability is improved with increasing RF power. The relat ive dielectric constant of the films deposited at the power of more th an 700 W is about 3.5. Moisture absorption of the film formed from TEF S at 900 W is smaller than that of the SiOF film formed from C2F6 adde d TEOS.