HIGH-RATE BIAS SPUTTERING FILLING OF SIO2 FILM EMPLOYING BOTH CONTINUOUS-WAVE AND TIME-MODULATED INDUCTIVELY-COUPLED PLASMAS

The SiO2 film deposition employing inductively coupled plasma (ICP) wi th SiCl2H2/O-2 occurred rapidly in the low-density plasma region due t o production of precursors of SiCl2H2Ox (x = 1-4). In an ICP CVD appar atus made with optimized distances between the antenna and the stage, and between the SiCl2H2 gas ring and the stage, a SiO2 film was with h igh deposition rate of more than 1 mu m/min, 1.5 times the BHF etch ra te of thermal oxide, and low Cl inclusion at a pressure of around 0.1 Torr. To supply ions to the Si wafer located in the ion-deficient plas ma region, another time-modulated ICP antenna was set near the stage. Since deposition rate decreased with increasing wafer temperature, the laser the interference measurement of a Si wafer set on an RF-biased stage revealed the importance of the tight adhesion of the wafer to th e stage. Ar+ ion bombardment during discharge on and off-time of 5 mu s enabled us to fill Si trenches with SiO2 at a V-dc of 500 V.