FERROELECTRIC PROPERTIES OF BAMGF4 FILMS GROWN ON SI(100), SI(111), AND PT(111) SIO2/SI(100) STRUCTURES/

Ferroelectric properties of BaMgF4 (BMF) films grown on Si(100), (111) and Pt(111)/SiO2/Si(100) structures were studied. No ferroelectric po larization along the surface normal was observed for (011)-oriented BM F films grown on Si(100) substrates, while (120)-oriented BMF films gr own on Si(111) and Pt(111)/SiO2/Si(100) structures clearly showed hyst eresis characteristics with ferroelectric polarization. The remanent p olarization values of the BMF films on Si(111) and Pt(111)/SiO2/Si(100 ) structures were 0.89 mu C/cm(2) and 5.0 mu C/cm(2), respectively. Fa brication and characterization of metal-ferroelectric-semiconductor (M FS) field effect transistors (FETs) using Si(111) substrates were atte mpted. It was observed that the threshold voltage of the fabricated MF S FETs was shifted upon applying a gate voltage.