BISMUTH TITANATE THIN-FILMS ON SI WITH BUFFER LAYERS PREPARED BY LASER-ABLATION AND THEIR ELECTRICAL-PROPERTIES

Bismuth titanate thin films are grown on SiO2/Si and Pt substrates at temperatures oi 300-500 degrees C by the laser ablation method, and th eir structural and electrical properties investigated. The films prepa red on Si substrates with a Pt or Bi2Ti2O7(BTO) buffer layer have c-ax is and (117) orientations, although the films on Pt and SiO2/Si substr ates orient preferentially along the c-axis and (117) direction, respe ctively. Capacitance-voltage hysteresis loops of bismuth titanate thin films on SiO2/Si and BTO/Si are observed corresponding to ferroelectr ic hysteresis of the film. Current-voltage characteristics bismuth tit anate films on Pt and BTO/Si substrates show low leakage current.