CHARACTERIZATION OF CHARGED TRAPS NEAR SI-SIO2 INTERFACE IN PHOTOINDUCED CHEMICAL-VAPOR-DEPOSITED SIO2 FILM

Charged traps near the Si-SiO2 interface in a SiO2 film deposited by p hoto-induced chemical vapor deposition (photo-CVD) have been analyzed by the photo I-V method. In the as-deposited film, positively charged traps distribute in the region between 2 nm and 10 nm from the Si-SiO2 interface, and their density decreases monotonically with increasing depth. The density of traps in the region between 2 nm and 4 nm is dec reased by annealing in N-2 or O-2, and that of traps in the region bet ween 4 nm and 10 nn is decreased only by annealing in O-2. Furthermore , the results of electron spin resonance (ESR) antilysis suggest the p ossibility that the positively charged traps in the 2-4 nm region are related to the defects observed in ESR.