ELIMINATION OF AL LINE AND VIA RESISTANCE DEGRADATION UNDER HTS TEST IN APPLICATION OF F-DOPED OXIDE AS INTERMETAL DIELECTRIC

Fluorine-doped silicon oxide (SiOF) as intermetal dielectric (IMD) lay er was deposited by conventional plasma-enhanced chemical vapor deposi tion (CVD). The main issues in the application of SiOF as IMD are as f ollows: (1) instability of film properties such as stress and refracti ve index during HTS test, (2) desorption of H2O and HF gases from SiOF film, (3) increase of line resistance, (4) wedgelike defects of metal lines, and (5) via resistance degradation during HTS test at 350 degr ees C. The above problems in use of SiOF as IMD can be eliminated by t he passivation of IMD with PE-SIN and the application of Ti underlayer before the second metal deposition.