INVESTIGATION OF DISSOLUTION KINETICS OF THIN GE-SB-S CHALCOGENIDE FILMS

The kinetics and the mechanism of dissolution of fresh and illuminated chalcogenide layers from the Ge-Sb-S system have been investigated by the turn-table method. The relative roles of surface chemical reactio n and diffusion in the heterogeneous dissolution process vs the layer composition have been established. Addition of a surface active substa nce (SAS) with cation-active organic nitrogen group to the alkaline so lvent changes the dissolution kinetics, The selective influence of SAS at the topological phase transition of the structure allows to contro l the process of dissolution of the chalcogenide films.