C. Gomezaleixandre et al., INFLUENCE OF METHANE CONCENTRATION ON THE NUCLEATION AND GROWTH-STAGES IN DIAMOND FILM DEPOSITION, Physica status solidi. a, Applied research, 154(1), 1996, pp. 23-32
Optical emission spectroscopy (OES) and mass spectrometry have been us
ed to characterize the reaction species during the CVD synthesis of di
amond films using methane and hydrogen gas mixtures in a microwave dis
charge. In tile low methane concentration range, an increase in the nu
cleation rate with the methane content in the reactor has been detecte
d by scanning tunneling microscopy (STM), which has been associated to
the increase in the atomic hydrogen as well as to the presence of CHx
(x < 3) radicals, considered as precursors of amorphous and diamond-l
ike carbon films. Although the further growth of the diamond films is
mainly associated with CH3 radicals and/or C2H2 molecules, present in
the discharge, other ionized CH+ species have been detected by OES, wh
ich are known to favor the attachment of methyl radicals on the growin
g surface.