IN-SITU ANALYSIS OF THE RAMAN DIAMOND LINE - MEASUREMENTS IN THE VISIBLE AND UV SPECTRAL RANGE

Raman spectroscopy is the most frequently used tool to characterize di amond Films prepared by various deposition methods. Hence, in situ Ram an monitoring of the growth of plasma CVD diamond films may contribute to tile understanding and the control of the growth process. As an at tempt to improve our previous in situ Raman measurements, a new spectr ometer is used, specifically designed for this application and optimiz ed for analysis in the UV spectral range. In this paper the first resu lts of this in situ analysis are presented and compared to those obtai ned with a more usual excitation in the visible spectral range. Carefu l temperature measurements during diamond deposition are made both usi ng ti-le temperature induced shift of the lines arising from the subst rate and from the Stokes to anti-Stokes intensity ratio. Then, the fre quency of the diamond line is related to stress incorporation within t he films. It is shown that there is a large stress gradient within the film thickness.