UV PHOTODETECTORS FROM THIN-FILM DIAMOND

Citation
Ssm. Chan et al., UV PHOTODETECTORS FROM THIN-FILM DIAMOND, Physica status solidi. a, Applied research, 154(1), 1996, pp. 445-454
Citations number
13
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
00318965
Volume
154
Issue
1
Year of publication
1996
Pages
445 - 454
Database
ISI
SICI code
0031-8965(1996)154:1<445:UPFTD>2.0.ZU;2-U
Abstract
Thin films of chemically vapour deposited diamond have been used to fa bricate photoconductive and photodiode structures for the detection of UV light. On free standing (80 mu m thick) material, a planar interdi gitated design with 20 mu m electrode spacing is found to offer greate r than five orders of magnitude in wavelength discrimination between d eep UV and visible light, with dark currents <0.1 nA, when a methane-a ir gas treatment is used. On silicon supported (6 mu m thick) films, a planar photodiode utilising gold Schottky and Ti-Ag-Au ohmic contacts , also offers a sharp cut-off in photoresponse in the deep UV with no measurable dark current; photoconductive devices fabricated on this ma terial do not show useful levels of performance.