DEPOSITION AND CHARACTERIZATION OF CVD-TUNGSTEN AND TUNGSTEN CARBONITRIDES ON (100)SI

Two different precursors were used to deposit W films on Si-W(CO)(6) a nd WCl6. By pyrolytic decomposition of W(CO)(6) at 400 degrees C in ar gon atmosphere W thin films with well-expressed textured structure wer e deposited on (100)Si substrates. By hydrogen reduction of WCl6 at 75 0 degrees C in Ar, polycrystalline W films were deposited. By the carb onyl process and in the presence of ammonia and acetone, WCxNy thin fi lms were obtained. Reflection High Energy Electron Diffraction (RHEED) method was used for structural characterization of the films. Tempera ture dependence of the electrical resistance of the films in the range 4.2-300 K was studied and the results are discussed in terms of films structure and composition.