Destructive oxidation mechanisms in a tungsten polycide structure were
investigated. In the experiments, the dependencies of the variation i
n the process flow, structural variations and annealing temperature ap
plication on the formation of destructive oxidation were examined. Sur
face and structural analyses were performed using a variety of analyti
cal techniques such as transmission electron microscopy. The deformed
oxide layer, having a pathological morphology of the oxide surface, wa
s formed on the silicide layer during the oxide process after the remo
val of the surface layer of silicon oxide that initially covered the c
rystallized silicide film. It was revealed that destructive oxidation
resulted from the formation of volatile metal-oxides, which originated
during the process of low temperature annealing in ambient O-2.