SYNCHROTRON-RADIATION-INDUCED DEPOSITION OF ETCH-PROTECTING FILM ON SI IN CF4 PLASMA

Carbonous film was deposited on silicon wafer in CF4 plasma when the s ilicon wafer was irradiated by synchrotron radiation (SR). The deposit ion rate was 183 Angstrom/min at a SR intensity of 1.43 W/cm(2), DC di scharge voltage of 700 V, discharge current of 6 mA. and CF4 gas press ure of 0.13 Torr. The film was characterized by Anger electron spectro scopy. The deposition mechanism of the film was due to photoexcitation of the silicon surface by SR irradiation.