The effects of degree of coherence in optical lithography using the du
mmy diffraction mask are investigated by simulation and experiment. In
fluences on resolution and depth of focus of the repeated and isolated
patterns are simulated for the several coherence factors of the illum
ination. The process margins are also simulated through the exposure v
s. defocus diagram. The Lithographic performances of the complex perio
dic patterns are experimented. As degree of coherence (DOC) decreases,
the contrast benefit is increased for Line and space(L/S) patterns si
ze less than 0.5 lambda/NA where NA is the numerical aperture, and the
depth of focus(DOF) benefit is increased for L/S patterns size less t
han 0.65 lambda/NA. The smaller L/S patterns size is, the greater the
influence of DOC is. In the isolated patterns of sub-resolution type,
better lithographic performances could be obtained for the smaller coh
erence factor.