ON ELECTRON-EMISSION FROM QUANTUM-WELLS IN ULTRATHIN FILMS OF WIDE-GAP SEMICONDUCTORS IN CROSSED FIELDS

An attempt is made to investigate the effects of an oriented magnetic field on the field emission from quantum wells in ultrathin films of w ide-gap semiconductors taking n-type GaAs as an example. The field emi ssion current density is found to increase both with increasing electr ic field and with increasing film thickness. Furthermore, the emission shows an oscillatory nature with a quantizing magnetic field, its ori entation, and the film thickness. At a given value of the magnetic fie ld, the oscillatory nature is most significantly influenced by the eff ects of size quantization at relatively small values of the film thick ness.