Thin, oriented films of poly-1,4-phenylene (PPP) were prepared with a
specially designed reaction vessel. Various kinds of metals were depos
ited by vacuum evaporation on the PPP substrate, the temperature of wh
ich was able to be changed up to 400 degrees C. Of the studied metals,
tellurium and bismuth exhibited the oriented crystallization on it. T
he oriented overgrowth of tellurium crystallites occurred in the tempe
rature range of 150 degrees C-200 degrees C, There were two modes of o
riented overgrowths of crystallites in the case of bismuth; one was pe
rformed by deposition around room temperature and the other at about 1
00 degrees C. The oriented overgrowths of bismuth and tellurium on PPP
were examined in terms of the mismatch parameter of the crystal latti
ce, and it was found that the overgrowths were caused by the lattice m
atching at the interface between the crystallites of the metals and th
e PPP substrate.