GROWTH OF DIAMOND THIN-FILMS BY MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION PROCESS

Citation
Hc. Barshilia et al., GROWTH OF DIAMOND THIN-FILMS BY MICROWAVE PLASMA CHEMICAL-VAPOR-DEPOSITION PROCESS, Journal of materials research, 11(4), 1996, pp. 1019-1024
Citations number
21
Categorie Soggetti
Material Science
ISSN journal
08842914
Volume
11
Issue
4
Year of publication
1996
Pages
1019 - 1024
Database
ISI
SICI code
0884-2914(1996)11:4<1019:GODTBM>2.0.ZU;2-E
Abstract
A very high vacuum compatible microwave plasma chemical vapor depositi on system has been fabricated for the growth of diamond thin films. Mi crocrystalline diamond thin films have been grown on silicon substrate s from the CH4-H-2 gas mixture. Scanning electron microscopy and x-ray diffraction have been used to study the surface morphology and the cr ystallographic structure of the films. Optical emission spectroscopy h as been used for the detection of chemical species present in the plas ma. The strong dependence of the film microstructure on the intensity of CH emission line has been observed.