Hall mobility, Hall ratio, and magnetoresistance coefficient of the el
ectrons two-dimensionally itinerant in a square quantum well of GaAs a
re calculated in the regime of dominant lattice scattering. A numerica
l iterative solution of the Boltzmann equation is used considering Fer
mi-Dirac statistics. The variation of the galvanomagnetic coefficients
is studied with temperature, 2D carrier concentration, channel width,
and magnetic field in the classical region.