INGAN MULTI-QUANTUM-WELL-STRUCTURE LASER-DIODES WITH CLEAVED MIRROR CAVITY FACETS

InGaN multi-quantum-well (MQW)-structure laser diodes (LDs) fabricated from III-V nitride materials were grown by metalorganic chemical vapo r deposition on sapphire substrate with (<11(2)over bar 0>) orientatio n (A face). The mirror facet for a laser cavity was formed by cleaving the substrate along the (<1(1)over bar 02>) orientation (R-face). As an active layer, the InGaN MQW structure was used. The InGaN MQW LDs s howed a sharp peak of light output at 415.6 nm that had a full width a t half-maximum of 0.05 nm under pulsed current injection of L17 A at r oom temperature. The laser threshold current density was 9.6 kA/cm(2).