K. Mukai et al., CONTROLLED QUANTUM CONFINEMENT POTENTIALS IN SELF-FORMED INGAAS QUANTUM DOTS GROWN BY ATOMIC LAYER EPITAXY TECHNIQUE, JPN J A P 2, 35(2B), 1996, pp. 262-265
The present work deals with the control of quantum confinement potenti
al in self-formed In0.5Ga0.5As/GaAs quantum dots. The dots were grown
by alternate supply of (InAs)/(GaAs) precursors using atomic layer epi
taxy technique, As the number of supply cycles increased from 9 to 30,
dot size observed by transmission electron microscopy increased from
20 to 32 nm in diameter and photoluminescence (PL) spectra shifted to
lower energy. Measuring PL spectra under a magnetic field, we found th
at the smaller the dots, the smaller the diamagnetic shifts. These res
ults indicate that the quantum confinement potential was controlled in
our growth technique.