COMPREHENSIVE NUMERICAL MODELING OF VERTICAL-CAVITY SURFACE-EMITTING LASERS

We present a comprehensive numerical model for vertical-cavity surface -emitting lasers that includes all major processes affecting cw operat ion of axisymmetric devices. In particular, our model includes a descr iption of the 2-D transport of electrons and holes through the claddin g layers to the quantum well(s), diffusion and recombination of these carriers within the wells, the 2-D transport of heat throughout the de vice, and a multilateral-mode effective index optical model, The optic al gain acquired by photons traversing the quantum wells is computed i ncluding the effects of strained band structure and quantum confinemen t, We employ our model to predict the behavior of higher-order lateral modes in proton-implanted devices and to provide an understanding of index-guiding in devices fabricated using selective oxidation.