The performance of the first diode-pumped Yb3+-doped Sr-5(PO4)(3)F (Yb
:S-FAP) solid-state laser is discussed. An InGaAs diode array has been
fabricated that has suitable specifications for pumping a 3 x 3 x 38
mm Yb:S-FAP rod, The saturation fluence for diode pumping was deduced
to be 5.5 J/cm(2) for the particular 2.8 kW peak power diode array uti
lized in our studies, This is 2,5x higher than the intrinsic 2.2 J/cm(
2) saturation fluence as is attributed to the 6.5 nm bandwidth of our
diode pump array, The small signal gain is consistent with the previou
sly measured emission cross section of 6.0 x 10(-20) cm(2), obtained f
rom a narrowband-laser pumped gain experiment, Up to 1.7 J/cm(3) of st
ored energy density was achieved in a 6 x 6 x 44 mm Yb:S-FAP amplifier
rod, In a free running configuration, diode-pumped slope efficiencies
up to 43% (laser output energy/absorbed pump energy) were observed wi
th output energies up to similar to 0.5 J per 1 ms pulse, When the rod
was mounted in a copper block for cooling, 13 W of average power was
produced with power supply limited operation at 70 Hz with 500 mu s pu
lses.