ULTRAFAST CHARACTERISTICS OF INGAP-INGAALP LASER-AMPLIFIERS

We characterize a visible, 670 nm, diode laser amplifier with respect to parameters of interest in short pulse generation and amplification, With a single pulse in the amplifier, we measure the differential gai n and saturation energy of the amplifier, and changes in the optical s pectrum of a pulse traveling through the amplifier, We also measure th e ultrafast gain dynamics using a pump and probe technique, We find th e ultrafast gain recovery time due to carrier heating is 400 fs +/- 30 fs, Our results differ quantitatively from those reported for InGaAsP and AlGaAs amplifiers.