ZNTE GAAS(001) - GROWTH MODE AND STRAIN EVOLUTION DURING THE EARLY STAGES OF MOLECULAR-BEAM-EPITAXY HETEROEPITAXIAL GROWTH/

Authors
ETGENS VH SAUVAGESIMKIN M PINCHAUX R MASSIES J JEDRECY N WALDHAUER A TATARENKO S JOUNEAU PH
Citation
Vh. Etgens et al., ZNTE GAAS(001) - GROWTH MODE AND STRAIN EVOLUTION DURING THE EARLY STAGES OF MOLECULAR-BEAM-EPITAXY HETEROEPITAXIAL GROWTH/, Physical review. B, Condensed matter, 47(16), 1993, pp. 10607-10612
Citations number
18
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
47
Issue
16
Year of publication
1993
Pages
10607 - 10612
Database
ISI
SICI code
0163-1829(1993)47:16<10607:ZG-GMA>2.0.ZU;2-D
Abstract
The initial stages of molecular-beam-epitaxy heteroepitaxial growth of ZnTe on GaAs(001) substrates are studied by in situ grazing incidence x-ray diffraction performed under ultrahigh vacuum. Pseudomorphic ful ly strained layers are observed for deposits up to 4 molecular layers (ML), whereas plastic relaxation starts after a critical thickness of about 5 ML together with the onset of a three-dimensional growth mode. Evidence for a normal strain gradient is obtained in partially relaxe d layers. The results are confirmed by ex situ high-resolution transmi ssion electron microscopy.