DIELECTRIC FUNCTION AND FERROELECTRIC PRO PERTIES OF HEAVILY DAMAGED SILICON

Authors
ZUKOWSKI PW KANTOROW SB MONCHKA D RODZIK A KISZCZAK K STELMAKH VF
Citation
Pw. Zukowski et al., DIELECTRIC FUNCTION AND FERROELECTRIC PRO PERTIES OF HEAVILY DAMAGED SILICON, Doklady Akademii nauk BSSR, 37(1), 1993, pp. 41-44
Citations number
9
Categorie Soggetti
Multidisciplinary Sciences
Journal title
Doklady Akademii nauk BSSR → ACNP
ISSN journal
0002354X
Volume
37
Issue
1
Year of publication
1993
Pages
41 - 44
Database
ISI
SICI code
0002-354X(1993)37:1<41:DFAFPP>2.0.ZU;2-F
Abstract
The calculations of thermally activated contribution in dielectric fun ction of heavily damaged semiconductors are presented. This contributi on is explained by hopping recharging of the deep states introduced in to the band gap by the defects. For the first time ferroelectric prope rties of silicon irradiated by fast reactor neutrons with fluence 10(1 9) cm-2 have been discovered.