THERMAL AND ELECTRICAL-TRANSPORT PROPERTIES OF TL2TE SINGLE-CRYSTALS

Authors
GAMAL GA NASSARY MM NAGAT AT ABOUALWAFA AM
Citation
Ga. Gamal et al., THERMAL AND ELECTRICAL-TRANSPORT PROPERTIES OF TL2TE SINGLE-CRYSTALS, Semiconductor science and technology, 11(4), 1996, pp. 516-520
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
4
Year of publication
1996
Pages
516 - 520
Database
ISI
SICI code
0268-1242(1996)11:4<516:TAEPOT>2.0.ZU;2-7
Abstract
Electrical conductivity, Hall effect and thermoelectric power measurem ents are made for the compound Tl2Te. This compound, which is a semico nductor grown in a single-crystal form, is studied over a wide range o f temperature from 150 to 375 K. The crystal is grown by a modificatio n of the Bridgman method. The combination of the electrical and therma l measurements in the present investigation makes it possible to find various physical parameters and to reveal the general behaviour of thi s semiconductor.