POST-HYDROGENATION OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON

Authors
BHATTACHARYA E GURUSWAMY G
Citation
E. Bhattacharya et G. Guruswamy, POST-HYDROGENATION OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON, Semiconductor science and technology, 11(4), 1996, pp. 531-534
Citations number
16
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
Journal title
Semiconductor science and technology → ACNP
ISSN journal
02681242
Volume
11
Issue
4
Year of publication
1996
Pages
531 - 534
Database
ISI
SICI code
0268-1242(1996)11:4<531:POLCA>2.0.ZU;2-Q
Abstract
We have grown undoped and doped amorphous silicon (a-Si) by low-pressu re chemical vapour deposition (LPCVD) from silane at 550 and 580 degre es C. The samples were then post-hydrogenated in an RF hydrogen plasma . The material is characterized by measurement of conductivity, hydrog en content and the slope of the Urbach tail. The effect of fast therma l quenching on the conductivity is investigated and the thermal equili brium temperature is measured for doped LPCVD a-Si.