E. Bhattacharya et G. Guruswamy, POST-HYDROGENATION OF LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON, Semiconductor science and technology, 11(4), 1996, pp. 531-534
We have grown undoped and doped amorphous silicon (a-Si) by low-pressu
re chemical vapour deposition (LPCVD) from silane at 550 and 580 degre
es C. The samples were then post-hydrogenated in an RF hydrogen plasma
. The material is characterized by measurement of conductivity, hydrog
en content and the slope of the Urbach tail. The effect of fast therma
l quenching on the conductivity is investigated and the thermal equili
brium temperature is measured for doped LPCVD a-Si.