STRUCTURAL-PROPERTIES OF HG1-XMNXTE LAYERS GROWN ON CDTE SUBSTRATES BY LIQUID-PHASE EPITAXY

Hg1-xMnxTe layers 20-80 mu m thick were grown on CdTe (111) substrates by liquid phase epitaxy (LPE) from an (Hg1-zMnz)(1-y)Te-y source with z = 0.02-0.08 and y = 0.7-0.8 at 450-550 degrees C. The structural pr operties of the layers were investigated by a number of characterizati on techniques such as scanning electron microscopy (SEM), x-ray topogr aphy (XRT), high-resolution x-ray diffractometry (HRXRD) and Rutherfor d backscattering spectrometry (RBS). It has been shown that the layers grown with source supercooling of 3-6 degrees C are macrodefect free, with a good surface morphology and a uniform composition. The main st ructural defects of the layers are misfit dislocations due to the latt ice mismatch; these are arranged in bands and are parallel to the thre e (110) directions lying on the (111) growth surface plane, with a 60 degrees symmetry. The Bragg peak of the layers has an FWHM value of ab out 50 arcsec and its shape is sensitive to the crystalline quality of the substrates. The structural inequality of the main crystallographi c axes of the layers was characterized quantitatively by the minimum y ield values determined from the RBS/channelling spectra. The data obta ined enabled a comparison to be made of the crystalline quality of Hg1 -xMnxTe and Hg1-xCdxTe LPE layers and thus provide information concern ing Hg1-xMnxTe LPE growth.