QUANTUM ANTI-DOT ARRAYS AND QUANTUM-WIRE TRANSISTORS FABRICATED ON INAS AL0.5GA0.5SB HETEROSTRUCTURES/

We report on a new fabrication process of anti-dot and multiple quantu m wire transistors based on InAs/AlGaSb heterostructures with conventi onal photolithography and wet chemical etching. Starting from the squa re arrays of a mask, anti-dot arrays of circular shape were fabricated utilizing the unique etching properties of this material system, whic h are quite different from those of its counterpart GaAs/AlGaAs. Succe ssful formation of the anti-dot structures was confirmed by magnetotra nsport measurements. For the fabrication of multiple quantum wire tran sistors, we introduced a GaAs regrowth as a hole barrier between the g ate electrode and the InAs channel layer to eliminate the inherent gat e leakage current for this material system and to obtain good device p erformance. By optimizing the fabrication process, we succeeded in for ming quantum wires with a width as narrow as 100 nm. The device perfor mance of the quantum wire transistor is compared with that of conventi onal two-dimensional electron gas transistors.