TERRACING OF (100)SI WITH ONE MASK AND ONE ETCHING STEP USING MISALIGNED V-GROOVES

Authors
VANGBO M BACKLUND Y
Citation
M. Vangbo et Y. Backlund, TERRACING OF (100)SI WITH ONE MASK AND ONE ETCHING STEP USING MISALIGNED V-GROOVES, Journal of micromechanics and microengineering, 6(1), 1996, pp. 39-41
Citations number
4
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Mechanical
Journal title
Journal of micromechanics and microengineering → ACNP
ISSN journal
09601317
Volume
6
Issue
1
Year of publication
1996
Pages
39 - 41
Database
ISI
SICI code
0960-1317(1996)6:1<39:TO(WOM>2.0.ZU;2-2
Abstract
By using narrowly spaced V-grooves slightly misaligned to the [110]-di rection, multilevel terracing can be obtained using one mask and one w et etching step only. Etching in the vertical direction is locally del ayed until the ridges between the V-grooves are fully underetched. The method is demonstrated in KOH and TMAH (tetramethyl ammonium hydroxid e) etchants and the dependence of angular misalignment on height and s urface smoothness are investigated.