IMPROVED QUALITY OF ZINC-OXIDE THIN-FILMS BY IN-SITU ANNEALING

Authors
BAKMIKKELSEN E DEREUS R BOUWSTRA S
Citation
E. Bakmikkelsen et al., IMPROVED QUALITY OF ZINC-OXIDE THIN-FILMS BY IN-SITU ANNEALING, Journal of micromechanics and microengineering, 6(1), 1996, pp. 63-65
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Mechanical
Journal title
Journal of micromechanics and microengineering → ACNP
ISSN journal
09601317
Volume
6
Issue
1
Year of publication
1996
Pages
63 - 65
Database
ISI
SICI code
0960-1317(1996)6:1<63:IQOZTB>2.0.ZU;2-Z
Abstract
Zinc oxide thin films with c-axis orientation have been manufactured b y an integrated sputtering and annealing method. Thin films annealed i n situ demonstrate a resistivity of 1 x 10(8) Ohm cm parallel to the c -axis, refractive index of 1.97, and compressive residual stress of ap proximately 2 x 10(8) Pa. The method implies that a complete depositio n, annealing, and passivation may be done in one vacuum run.